PART |
Description |
Maker |
SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
SIDC24D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
SHD62003109 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER 4 A, SILICON CARBIDE, RECTIFIER DIODE HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
C4D15120A-14 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
GA50JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
GA50JT06-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
GC2X50MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
SHD626051N SHD626051P SHD626051 SHD626051D |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
|